- 您现在的位置：买卖IC网 > Sheet目录507 > SI1037X-T1-E3 (Vishay Siliconix)MOSFET P-CH 20V 770MA SC-75A
Si1037X
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 70 °C
V DS = - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 0.77 A
- 0.45
-4
0.160
± 100
-1
-5
0.195
V
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 0.67 A
0.212
0.260
?
V GS = - 1.8 V, I D = - 0.2 A
0.290
0.350
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 0.77 A
3.1
S
Diode Forward Voltage
a
V SD
I S = - 0.14 A, V GS = 0 V
- 0.78
- 1.2
V
Dynamic b
Total Gate Charge
Q g
3.5
5.5
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = - 10 V, V GS = - 4.5 V, I D = - 0.77 A
V DD = - 10 V, R L = 20 ?
0.65
0.60
10
15
20
30
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? - 0.5 A, V GEN = - 4.5 V, R G = 6 ?
I F = - 0.14 A, dI/dt = 100 A/μs
30
10
20
60
20
40
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
4.0
V GS = 5 V thru 2.5 V
4.0
T C = - 55 °C
3.2
2V
3.2
25 °C
125 °C
2.4
1.6
0.8
0.0
1.5 V
1V
2.4
1.6
0.8
0.0
0.0
0.8
1.6
2.4
3.2
4.0
0.0
0.5
1.0
1.5
2.0
2.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI1046R-T1-E3
MOSFET N-CH 20V 606MA SC75-3
SI1046X-T1-GE3
MOSFET N-CH 20V 606MA SC89-3
SI1050X-T1-GE3
MOSFET N-CH D-S 8V SC-89-6
SI1051X-T1-E3
MOSFET P-CH 8V 1.2A SC89-6
SI1056X-T1-GE3
MOSFET N-CH D-S 20V SC-89-6
SI1058X-T1-GE3
MOSFET N-CH 20V SC89
SI1065X-T1-GE3
MOSFET P-CH 12V 1.18A SC89-6
SI1067X-T1-GE3
MOSFET P-CH 20V 1.06A SC89-6
相关代理商/技术参数
SI1037X-T1-GE3
功能描述:MOSFET 20V 0.84A 0.21W 195mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1039X
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI1039X-T1
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI1039X-T1-E3
功能描述:MOSFET 12V 0.95A 0.21W 165 mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1039X-T1-GE3
功能描述:MOSFET 12V 0.95A 0.21W 165mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI103X
制造商:SILABS 制造商全称:SILABS 功能描述:Ultra Low Power 128K, LCD MCU Family
SI104
制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT Power Inductor
SI1040X
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Load Switch with Level-Shift